amplifiers - l ine a r & p ower - chip 3 3 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC907 gaas phemt mmic power amplifier, 0.2 - 22 ghz v00.0310 general description features functional diagram the hm c907 is a gaas mmi c p hem t distributed p ower amplifer die which operates between 0.2 and 22 g h z. this self-biased power amplifer provides 14 db of gain, 38 dbm output ip 3 and +27 dbm of output power at 1 db gain compression while requir - ing only 350ma from a +10v supply. gain fatness is excellent at 0.6 db from dc to 12 g h z making the hm c907 ideal for ew , e c m , r adar and test equip - ment applications. the hm c907 amplifer i / o s are internally matched to 50 o hms facilitating integration into m utli-chip- m odules ( m c m s). all data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length. h igh p 1db o utput p ower: +27 dbm h igh gain: 14 db h igh o utput ip 3: +38 dbm s ingle s upply: +10v @ 350 ma 50 o hm m atched i nput/ o utput die s ize: 2.91 x 1.33 x 0.1 mm typical applications the hm c907 is ideal for: ? test i nstrumentation ? m icrowave r adio & v s at ? m ilitary & s pace ? telecom i nfrastructure ? f iber o ptics electrical specifcations, t a = +25 c, vdd = +10v, idd = 350ma p arameter m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. units f requency r ange 0.2 - 8 8 - 16 16 - 22 g h z gain 12 13.5 12 13.5 12.5 14 db gain f latness 0.6 0.5 0.3 db gain variation o ver temperature 0.008 0.008 0.009 db/ c i nput r eturn l oss 15 15 15 db o utput r eturn l oss 15 20 15 db o utput p ower for 1 db compression ( p 1db) 23 26 25 27 23 25.5 dbm s aturated o utput p ower ( p sat) 28.5 29.5 28.5 dbm o utput third o rder i ntercept ( ip 3) 37 38 37 dbm n oise f igure 3.5 2.5 3.0 db s upply current ( i dd) (vdd= 10v) 350 350 350 ma
amplifiers - l ine a r & p ower - chip 3 3 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com output return loss vs. temperature gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. frequency HMC907 v00.0310 gaas phemt mmic power amplifier, 0.2 - 22 ghz -40 -30 -20 -10 0 10 20 30 0 5 10 15 20 25 30 s21 s11 s22 response (db) frequency (ghz) -40 -30 -20 -10 0 0 4 8 12 16 20 24 +25c +85c -55c return loss (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 0 4 8 12 16 20 24 +25c +85c -55c isolation (db) frequency (ghz) -40 -30 -20 -10 0 0 4 8 12 16 20 24 +25c +85c -55c return loss (db) frequency (ghz) 6 8 10 12 14 16 0 4 8 12 16 20 24 +25c +85c -55c gain (db) frequency (ghz) 0 1 2 3 4 5 6 7 0 2 4 6 8 10 12 14 16 18 20 22 noise figure (db) frequency (ghz)
amplifiers - l ine a r & p ower - chip 3 3 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com output ip3 vs. output power @ 12 ghz p1db vs. frequency psat vs. temperature output ip3 vs. temperature @ pout = 16 dbm tone gain, power & output ip3 vs. supply voltage @ 12 ghz HMC907 v00.0310 gaas phemt mmic power amplifier, 0.2 - 22 ghz 10 15 20 25 30 35 40 45 9 9.5 10 10.5 11 gain p1db psat ip3 gain (db), p1db (dbm), psat (dbm), ip3 (dbm) vdd (v) 25 30 35 40 45 50 10 12 14 16 18 20 22 24 9v 10v 11v ip3 (dbm) output power (dbm) 25 30 35 40 45 50 0 4 8 12 16 20 24 +25c +85c -55c ip3 (dbm) frequency (ghz) 20 22 24 26 28 30 32 0 4 8 12 16 20 24 +25c +85c -55c p1db (dbm) frequency (ghz) 20 22 24 26 28 30 32 0 4 8 12 16 20 24 +25c +85c -55c psat (dbm) frequency (ghz)
amplifiers - l ine a r & p ower - chip 3 3 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com power compression @ 20 ghz power dissipation power compression @ 2 ghz power compression @ 12 ghz HMC907 v00.0310 gaas phemt mmic power amplifier, 0.2 - 22 ghz 0 4 8 12 16 20 24 28 32 0 4 8 12 16 20 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 4 8 12 16 20 24 28 32 0 4 8 12 16 20 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 4 8 12 16 20 24 28 32 0 4 8 12 16 20 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 1 2 3 4 5 6 0 4 8 12 16 20 max pdis @ 85c 2ghz 20ghz power dissipation (w) input power (dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing no t es : 1. a ll d imensions in in c hes [ millime t ers ] 2. d ie t hi ck ness is 0.004 (0.100) 3. ty pi ca l b on d p ad is 0.004 (0.100) s qua re 4. b on d p ad me ta li zat ion : g ol d 5. back si d e me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d 7. no c onne ct ion re qu ire d for u nl ab ele d b on d p ad s 8. o v er a ll d ie si z e is .002 die packaging information [1] s tandard alternate wp -9 ( w affle p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC907 v00.0310 gaas phemt mmic power amplifier, 0.2 - 22 ghz this die utilizes fragile air bridges. any pick-up tools used must not contact the die in the cross hatched area. absolute maximum ratings drain bias voltage (vdd) +11 vdc rf i nput p ower ( rfin )(vdd = +11v) +20 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 63 m w /c above 85 c) 4.1 w thermal r esistance (channel to die bottom) 15.8 c/ w s torage temperature -65 to 150c o perating temperature -55 to 85 c vdd (v) i dd (ma) +9 350 +10 350 +11 350 typical supply current vs. vdd ele ct ros tat i c sensi t i v e d e v i c e o b ser v e han d lin g pre caut ions
amplifiers - l ine a r & p ower - chip 3 3 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC907 v00.0310 gaas phemt mmic power amplifier, 0.2 - 22 ghz p ad n umber f unction description i nterface s chematic 1 rfin this pad is dc coupled and matched to 50 o hms. blocking capacitor is required. 2 o ut & vdd rf output for amplifer. connect dc bias (vdd) network to provide drain current ( i dd). s ee application circuit herein. die bottom g n d die bottom must be connected to rf /dc ground. pad descriptions
amplifiers - l ine a r & p ower - chip 3 3 - 7 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com application circuit note 1: drain bias (vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500ma assembly diagram HMC907 v00.0310 gaas phemt mmic power amplifier, 0.2 - 22 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 8 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with two 1 mil wires are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.127mm (0.005) thick alumina thin film substrate 0.076mm (0.003) figure 1. 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.254mm (0.010) thick alumina thin film substrate 0.076mm (0.003) figure 2. 0.150mm (0.005) thick moly tab HMC907 v00.0310 gaas phemt mmic power amplifier, 0.2 - 22 ghz
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